With a wide range of single and multi-element configurations available, these devices provide the highest quantum efficiency of any silicon photodiode at 1064nm (> 35%) as well as low dark current and low capacitance. Additionally, standard quadrant and multi-element configurations produce low cross talk (<2%). Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters.

Active Area Prefix Descriptions:
PS - Photodiode Square
PC - Photodiode Circular
PR - Photodiode Rectangular
QP - Quadrant Photodiode