Silicon Photodiodes: Series Q
1064nm Enhanced Silicon Quadrant Photodiode

With a wide range of single and multi-element configurations available, these devices provide the highest quantum efficiency of any silicon photodiode at 1064nm (> 55%) as well as low dark current and low capacitance. Additionally, standard quadrant and multi-element configurations produce low cross talk (<2%). Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters.

Active Area Prefix Descriptions:
PS - Photodiode Square
PC - Photodiode Circular
PR - Photodiode Rectangular
QP - Quadrant Photodiode

Series Q: 1064 nm Enhanced Photodiodes
Part Number
Total Active Area
Id nA @ 1064nm,
23°C
Rise Time
ns @ 150V, 1064nm
Data Sheet
Call to Buy
or Buy Online
(USA Only)
Size (mm)
Area (mm2)
PS100-Q-BNC
10 x 10
100
80
6
-
PS100-Q-SM
10 x 10
100
80
6
-
Series Q: 1064 nm Enhanced Quadrant Photodiodes
Part Number
Total Active Area
Gap µm
Id nA @ 150V, 23°C
Rise Time
ns @ 150V, 1064nm
Data Sheet
Call to Buy
or Buy Online
(USA Only)
Size (mm)
Area (mm2)
QP45-Q-TO8i
6.69 x 6.69
45
70
20
5
-
QP100-Q-SM
10.0 x 10.0
100
50
20
6
-
QP154-Q-TO1032i
Ø14.0
154
70
20
6
-
Series Q: 1064 nm Enhanced Quadrant Modules
Part Number
Description
Data Sheet
Order by Phone
or Buy Online
(USA Only)
QP45-Q-HVSD
45 mm2 with 70 µm gaps, 1064 nm enhanced quadrant detector module with sum & difference circuitry. Ready to use with connector.
-
QP154-Q-HVSD
154 mm2 with 70 µm gaps, 1064 nm enhanced quadrant detector module with sum & difference circuitry. Ready to use with connector.
-
5700 Corsa Avenue, #105, Westlake Village, CA 91362 Phone:(818) 706-3400 Fax:(818) 889-7053
Copyright © 2011 Pacific Silicon Sensor Inc.

 

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