Pacific Silicon Sensor

Silicon Photodiodes: Series Q
1064nm Enhanced Silicon Quadrant Photodiode

With a wide range of single and multi-element configurations available, these devices provide the highest quantum efficiency of any silicon photodiode at 1064nm (> 55%) as well as low dark current and low capacitance. Additionally, standard quadrant and multi-element configurations produce low cross talk (<2%). Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters.

Active Area Prefix Descriptions:
PS - Photodiode Square
PC - Photodiode Circular
PR - Photodiode Rectangular
QP - Quadrant Photodiode

Series Q: 1064 nm Enhanced Photodiodes
Part Number	Total Active Area		Id nA @ 1064nm, 23°C	Rise Time ns @ 150V, 1064nm	Data Sheet	Call to Buy or Buy Online (USA Only)
Part Number	Size (mm)	Area (mm²)	Id nA @ 1064nm, 23°C	Rise Time ns @ 150V, 1064nm	Data Sheet	Call to Buy or Buy Online (USA Only)
PS100-Q-BNC	10 x 10	100	80	6		Call	-
PS100-Q-SM	10 x 10	100	80	6		Call	-

Series Q: 1064 nm Enhanced Quadrant Photodiodes
Part Number	Total Active Area		Gap µm	Id nA @ 150V, 23°C	Rise Time ns @ 150V, 1064nm	Data Sheet	Call to Buy or Buy Online (USA Only)
Part Number	Size (mm)	Area (mm²)	Gap µm	Id nA @ 150V, 23°C	Rise Time ns @ 150V, 1064nm	Data Sheet	Call to Buy or Buy Online (USA Only)
QP45-Q-TO8i	6.69 x 6.69	45	70	20	5		Call	-
QP100-Q-SM	10.0 x 10.0	100	50	20	6		Call	-
QP154-Q-TO1032i	Ø14.0	154	70	20	6		Call	-

Series Q: 1064 nm Enhanced Quadrant Modules
Part Number	Description	Data Sheet	Order by Phone or Buy Online (USA Only)
QP45-Q-HVSD	45 mm² with 70 µm gaps, 1064 nm enhanced quadrant detector module with sum & difference circuitry. Ready to use with connector.		Call	-
QP154-Q-HVSD	154 mm² with 70 µm gaps, 1064 nm enhanced quadrant detector module with sum & difference circuitry. Ready to use with connector.		Call	-

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