Silicon
Photodiodes: Series 5t
Fast Photodiodes for Low Voltage Applications
This series of fast epitaxial photodiodes is especially designed for low bias voltages between 3V und 5V. It is therefore ideal for VIS- and NIR-applications with CMOS components.
Special Features
Pin-Photodiodes with epitaxial layer structure for fast rise time at low bias voltage.
Epitaxial layer thickness optimized for best speed and responsivity at 850nm.
Low bias voltage - fully depleted at 3.5V.
Active Area Prefix Descriptions:
PS - Photodiode Square
PC - Photodiode Circular
PR - Photodiode Rectangular
QP - Quadrant Photodiode
Series
5t: Fast Photodiodes for Low Voltage Applications
