Silicon Photodiodes: Series 5
High Speed Epitaxial P-I-N Photodiodes with Fast Rise and
Fall Times at Low Bias Voltage

A high speed epitaxial layer structure provides fast rise time (<0.5ns @ 20V) and low dark current. A variety of standard and custom package options are available, including TO, flex circuit and chip sub-mounts

Active Area Prefix Descriptions:
PS - Photodiode Square
PC - Photodiode Circular
PR - Photodiode Rectangular
QP - Quadrant Photodiode

 
Series 5: High Speed Epitaxial P-I-N Photodiodes with Fast Rise and Fall Times at Low Bias Voltage
Part Number
Active Area
Id
nA @ 20V
Rise Time
ns @ 850nm
Data
Sheet
 Call to Buy
or Buy Online
(USA Only)
Size (mm)
Area (mm2)
0V
20V
PS0.25-5
0.5 x 0.5
0.25
0.05
2
0.4
PS0.25-5-LCC6.1
0.5 x 0.5
0.25
0.05
2
0.4
PS0.9-5
0.95 x 0.95
0.9
0.5
9
1.5
PS1.0-5e-TO52-S1
1.01 x 1.01
1.0
0.5
-
1
PS3.6-5
1.9 x 1.9
3.6
0.4
15
2.5
PS11.9-5
3.45 x 3.45
11.9
1
25
3
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5700 Corsa Avenue, #105, Westlake Village, CA 91362 Phone:(818) 706-3400 Fax:(818) 889-7053
Copyright © 2008 Pacific Silicon Sensor Inc.

 

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