Silicon Photodiodes: Series 5
High Speed Epitaxial PIN Photodiodes with Fast Rise and
Fall Times at Low Bias Voltage

A high speed epitaxial layer structure provides fast rise time (<0.5ns @ 20V) and low dark current. A variety of standard and custom package options are available, including TO, flex circuit and chip sub-mounts

Active Area Prefix Descriptions:
PS - Photodiode Square
PC - Photodiode Circular
PR - Photodiode Rectangular
QP - Quadrant Photodiode

 
Series 5: High Speed Epitaxial PIN Photodiodes with Fast Rise and Fall Times at Low Bias Voltage
Part Number
Active Area
Id (nA)
Rise Time
ns @ 850nm
Data
Sheet
Order by Phone
or Buy Online
(USA Only)
Size (mm)
Area (mm2)
0V
 3.5V
15V
20V
PS0.25-5
0.5 x 0.5
0.25
0.05 @ 20V
2
-
-
0.4
PS0.25-5-LCC6.1
0.5 x 0.5
0.25
0.05 @ 20V
2
-
-
0.4
-
PC0.55-5e-TO52-S1
Ø0.84
0.55
1.0 @ 15V
-
-
1
-
-
PC0.55-5th-TO52-S1
Ø0.84
0.55
0.05 @ 3.5V
-
1
-
-
-
PS0.9-5
0.95 x 0.95
0.9
0.5 @ 20V
9
-
-
1.5
PS1.0-5e-TO52-S1
1.01 x 1.01
1.0
0.5 @ 20V
-
-
-
1
-
PS3.6-5
1.9 x 1.9
3.6
0.4 @ 20V
15
-
-
2.5
PS3.6-5-SM
1.9 x 1.9
3.6
0.4 @ 20V
15
-
-
2.5
-
PS11.9-5
3.45 x 3.45
11.9
1 @ 20V
25
-
-
3
PC20-5-TO8
Ø5.05
20
2 @ 20V
-
-
-
3.5
-
PS100-5-BNC
10 x 10
100
2 @ 20V
-
-
-
5
-
PS100-5-CER-2 PIN
10 x 10
100
2 @ 20V
-
-
-
5
-
PS100-5-SM
10 x 10
100
2 @ 20V
-
-
-
5
-
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Copyright © 2010 Pacific Silicon Sensor Inc.

 

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