Quadrant Photodiodes
Quadrant (4 element) Devices for Centering/Beam Positioning

A quadrant photodiode is a 2 x 2 array of individual photodiode active areas, separated by a small gap, fabricated on a single chip. This maximizes the uniformity and performance matching between the four individual elements. Quadrant photodiodes are used most frequently for position sensing of laser beams, autocollimators and other alignment applications.

In addition to the devices listed below, Pacific Silicon Sensor can design and manufacture quadrant photodiodes in differing sizes and shapes, enhanced to meet the requirements of your specific application. Our quadrant photodiodes are also available in die form or can be mounted on/in any electronic package or substrate compatible with wire bonding.

 

Quadrant Photodiodes Data
Part Number
Total Active Area
Gap µm
Id nA @ 10V
Rise Time
ns @ 10V, 850nm
Data Sheet
Call to Buy
or Buy Online
(USA Only)
Size (mm)
Area (mm2)
QP1-6
Ø1.13
1
16
0.1
20
pdf
QP2-6
Ø1.60
2
20
0.1
20
QP5-6
Ø2.52
5
24
0.2
20
QP5.8-6-TO5
2.4 x 2.4
5.76
50
0.4
20
QP10-6
Ø3.57
10
28
0.5
20
QP20-6-TO8
Ø5.05
20
34
1
30
QP50-6-SM
Ø7.98
50
42
2
40
QP50-6-TO8
Ø7.98
50
42
2
40
QP50-6-18µ-SM
Ø7.98
50
18
2
40
QP50-6-18µ-TO8
Ø7.98
50
18
2
40
QP100-6-SM
Ø11.2
100
50
5
50
Part Number
Description
Data Sheet
Call to Buy
or Buy Online
(USA Only)
QP50-6SD2
50mm2 quadrant detector module with sum & difference circuitry. Ready to use with connector. (Sum and difference PCB can be purchased without QP50-6 detector).
QP50-6SD2-DIAG
50mm2 quadrant detector module with sum & difference circuitry. Provides top minus bottom and diagonal difference signals.
QP-SD-NORM PCBA

Companion PC board for the QP50-6-SD2 providing “normalizing” (eliminating effects of input light intensity fluctuations) for the voltage outputs of the two difference signals.

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Silicon Photodiodes: Series Q
1064nm Enhanced Silicon Quadrant Photodiode

With a wide range of single and multi-element configurations available, these devices provide the highest quantum efficiency of any silicon photodiode at 1064nm (> 35%) as well as low dark current and low capacitance. Additionally, standard quadrant and multi-element configurations produce low cross talk (<2%). Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters.

Active Area Prefix Descriptions:
PS - Photodiode Square
PC - Photodiode Circular
PR - Photodiode Rectangular
QP - Quadrant Photodiode

Series Q: 1064 nm Enhanced Silicon Quadrant Photodiode
Part Number
Total Active Area
Gap µm
Id nA @ 150V, 23°C
Rise Time
ns @ 150V, 1064nm
Data Sheet
Call to Buy
or Buy Online
(USA Only)
Size (mm)
Area (mm2)
QP50-Q-TO1032
Ø7.98
50
70
15
5
QP154-Q-TO1032
Ø14
154
100
20
6
5700 Corsa Avenue, #105, Westlake Village, CA 91362 Phone:(818) 706-3400 Fax:(818) 889-7053
Copyright © 2008 Pacific Silicon Sensor Inc.

 

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