Response Data |
Silicon Photodiodes |
| Pacific Silicon Sensor's product line includes seven different series of Silicon Photodiodes. Each series is specially fabricated to address different performance specifications and design goals. Our silicon photodiodes are grouped in the following series: |
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Silicon
Photodiodes: Series 2
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Silicon
Photodiodes: Series 4
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Silicon
Photodiodes: Series 5
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Silicon
Photodiodes: Series 6
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Silicon
Photodiodes: Series 6B
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Silicon
Photodiodes: Series 7
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Silicon
Photodiodes: Series Q
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Avalanche Photodiodes |
| Pacific Silicon Sensor’s
APD product line includes five different series’ of devices.
Each series is designed and produced to meet certain specifications
and design goals. While we offer a variety of choices in each
series, we realize that you may have additional requirements
or design parameters; each of your concerns and requirements
can be met on an application specific (custom) basis. We are
the world leader in custom APD devices, and encourage you
to contact us to discuss your specific application. |
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Series
8 - High Speed/High Gain Devices:
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Series
9 - NIR Enhanced Response:
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Series
10 - 1064nm Enhanced Response:
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Series
11 - 410nm Enhanced Response:
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Series
12 - Enhanced Response Blue-Green:
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Quadrant Photodiodes |
A quadrant photodiode is a 2 x 2 array of individual photodiode active areas, separated by a small gap, fabricated on a single chip. This maximizes the uniformity and performance matching between the four individual elements. Quadrant photodiodes are used most frequently for position sensing of laser beems, autocollimators and other alignment applications.
In addition to our standards, Pacific Silicon Sensor can design and manufacture quadrant photodiodes in other sizes and shapes, enhanced to meet the requirements of your specific application. Our quadrant photodiodes are also available in die form or can be mounted on/in any electronic package or substrate compatible with wire bonding. |
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Position Sensitive Detectors (Lateral Effect Photodiodes) |
This is a single P-N junction photodetector which uses the large resistance between the active area top surface edge electrodes ( and for the duo-lateral, bottom surface edge electrodes) to produce photocurrents that are proportional to the location on the active area that is irradiated with a spot of light. |
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Wavelength Sensitive Detectors |
| This is a unique photo detector with two vertically stacked P-N junctions on a single silicon chip. One junction is response enhanced for blue/visible light, the other enhanced for red/near IR. Monochromatic light between 480nm and 850nm generates different amounts of photocurrent in each junction. This produces a unique photocurrent ratio that can be correlated to the exact wavelength of radiation. |
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